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Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
We report on the defect states incorporated in a-plane GaN crystals grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two defect states were observed at 0.2 eV and 0.55 eV below the conduction band minimum with defect densitie...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2018
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5959929/ https://ncbi.nlm.nih.gov/pubmed/29777185 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-26290-y |
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