Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE

相似書籍

• Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation
  由: Lee, Moonsang, et al.
  出版: (2018)
• The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
  由: Lee, Moonsang, et al.
  出版: (2017)
• First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
  由: Lee, Moonsang, et al.
  出版: (2019)
• High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE
  由: Huo, Qin, et al.
  出版: (2018)
• The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
  由: Jue, Miyeon, et al.
  出版: (2015)