A carregar...
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
We report on the defect states incorporated in a-plane GaN crystals grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two defect states were observed at 0.2 eV and 0.55 eV below the conduction band minimum with defect densitie...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5959929/ https://ncbi.nlm.nih.gov/pubmed/29777185 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-26290-y |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|