Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon...

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Publicat a:Nanomaterials (Basel)
Autors principals: Ma, Zhe, Liu, Yang, Deng, Lingxiao, Zhang, Mingliang, Zhang, Shuyuan, Ma, Jing, Song, Peishuai, Liu, Qing, Ji, An, Yang, Fuhua, Wang, Xiaodong
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2018
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5853709/
https://ncbi.nlm.nih.gov/pubmed/29385759
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8020077
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