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Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon...
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| 出版年: | Nanomaterials (Basel) |
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| 主要な著者: | , , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5853709/ https://ncbi.nlm.nih.gov/pubmed/29385759 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8020077 |
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