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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5793541/ https://ncbi.nlm.nih.gov/pubmed/29283368 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11010043 |
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