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Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin
This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray a...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5793530/ https://ncbi.nlm.nih.gov/pubmed/29278374 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11010032 |
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