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Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-bas...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5455395/ https://ncbi.nlm.nih.gov/pubmed/28793630 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8105374 |
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