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A Collective Study on Modeling and Simulation of Resistive Random Access Memory
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across...
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| 發表在: | Nanoscale Res Lett |
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| Main Authors: | , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer US
2018
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5762646/ https://ncbi.nlm.nih.gov/pubmed/29322363 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2419-8 |
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