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A Collective Study on Modeling and Simulation of Resistive Random Access Memory

In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Panda, Debashis, Sahu, Paritosh Piyush, Tseng, Tseung Yuen
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5762646/
https://ncbi.nlm.nih.gov/pubmed/29322363
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2419-8
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