A carregar...
Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise
The intense development and study of resistive random access memory (RRAM) devices has opened a new era in semiconductor memory manufacturing. Resistive switching and carrier conduction inside RRAM films have become critical issues in recent years. Electron trapping/detrapping behavior is observed a...
Na minha lista:
| Main Authors: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Institute of Physics
2012
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3331868/ https://ncbi.nlm.nih.gov/pubmed/22536005 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3691224 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|