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Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5034279/ https://ncbi.nlm.nih.gov/pubmed/27659298 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33967 |
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