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Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with...
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| Yayımlandı: | Sci Rep |
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| Asıl Yazarlar: | , , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group
2016
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5034279/ https://ncbi.nlm.nih.gov/pubmed/27659298 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33967 |
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