Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with...

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Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Song, Younggul, Jeong, Hyunhak, Chung, Seungjun, Ahn, Geun Ho, Kim, Tae-Young, Jang, Jingon, Yoo, Daekyoung, Jeong, Heejun, Javey, Ali, Lee, Takhee
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5034279/
https://ncbi.nlm.nih.gov/pubmed/27659298
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33967
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