Tseng, Y. H., Shen, W. C., & Lin, C. J. (2012). Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise. American Institute of Physics.
Chicago Style CitationTseng, Yuan Heng, Wen Chao Shen, and Chrong Jung Lin. Modeling of Electron Conduction in Contact Resistive Random Access Memory Devices As Random Telegraph Noise. American Institute of Physics, 2012.
MLA CitationTseng, Yuan Heng, Wen Chao Shen, and Chrong Jung Lin. Modeling of Electron Conduction in Contact Resistive Random Access Memory Devices As Random Telegraph Noise. American Institute of Physics, 2012.
Warning: These citations may not always be 100% accurate.