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Conductance Quantization in Resistive Random Access Memory
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the ne...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4623080/ https://ncbi.nlm.nih.gov/pubmed/26501832 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1118-6 |
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