Caricamento...
Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications
This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large d...
Salvato in:
| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2017
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5735178/ https://ncbi.nlm.nih.gov/pubmed/29255167 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-17985-9 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|