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RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates

We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWH...

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Publicado en:Micromachines (Basel)
Main Authors: Valliyil Sasi, Visakh, Iqbal, Abid, Chaik, Kien, Iacopi, Alan, Mohd-Yasin, Faisal
Formato: Artigo
Idioma:Inglês
Publicado: MDPI 2017
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Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC6190226/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi8050148
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