Physical origins of current and temperature controlled negative differential resistances in NbO(2)

Negative differential resistance behavior in oxide memristors, especially those using NbO(2), is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a rel...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A.L. David, Nishi, Yoshio, Williams, R. Stanley
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5610340/
https://ncbi.nlm.nih.gov/pubmed/28939848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00773-4
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