Physical origins of current and temperature controlled negative differential resistances in NbO(2)

Negative differential resistance behavior in oxide memristors, especially those using NbO(2), is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a rel...

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Pubblicato in:Nat Commun
Autori principali: Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A.L. David, Nishi, Yoshio, Williams, R. Stanley
Natura: Artigo
Lingua:Inglês
Pubblicazione: Nature Publishing Group UK 2017
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Article
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5610340/
https://ncbi.nlm.nih.gov/pubmed/28939848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00773-4
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