Physical origins of current and temperature controlled negative differential resistances in NbO(2)

Negative differential resistance behavior in oxide memristors, especially those using NbO(2), is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a rel...

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Publicat a:Nat Commun
Autors principals: Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A.L. David, Nishi, Yoshio, Williams, R. Stanley
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2017
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5610340/
https://ncbi.nlm.nih.gov/pubmed/28939848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00773-4
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