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Fast and slow transient charging of Oxide Semiconductor Transistors

The comprehension of the governing mechanism which affects device instability is one of the most important requirements for the formation of reliable oxide-thin film transistors (TFTs). However, a quantitative analysis of the dominant mechanism of device instability, which stems from charge trapping...

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Bibliographic Details
Published in:Sci Rep
Main Authors: Kim, Taeho, Park, Sungho, Jeon, Sanghun
Format: Artigo
Language:Inglês
Published: Nature Publishing Group UK 2017
Subjects:
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC5605542/
https://ncbi.nlm.nih.gov/pubmed/28928390
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12155-3
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