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Scalability of Schottky barrier metal-oxide-semiconductor transistors
In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky...
保存先:
| 出版年: | Nano Converg |
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| 第一著者: | |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Korea Nano Technology Research Society
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5271151/ https://ncbi.nlm.nih.gov/pubmed/28191421 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s40580-016-0071-0 |
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