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Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Quantized magnetotransport is observed in 5.6 × 5.6 mm(2) epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of [Formula: see text] is maintained up to record level of critical curren...
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| Vydáno v: | Carbon N Y |
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| Hlavní autoři: | , , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5600207/ https://ncbi.nlm.nih.gov/pubmed/28924301 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.carbon.2016.12.087 |
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