Effects of linker length and transient secondary structure elements in the intrinsically disordered Notch RAM region on Notch signaling

Formation of the bivalent interaction between the Notch intracellular domain (NICD) and the transcription factor CSL is a key event in Notch signaling because it switches Notch-responsive genes from a repressed state to an activated state. Interaction of the intrinsically disordered RAM region of NI...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:J Mol Biol
Prif Awduron: Sherry, Kathryn P, Johnson, Scott E, Hatem, Christine L, Majumdar, Ananya, Barrick, Doug
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: 2015
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC5576018/
https://ncbi.nlm.nih.gov/pubmed/26344835
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jmb.2015.09.001
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