טוען...
Effects of linker length and transient secondary structure elements in the intrinsically disordered Notch RAM region on Notch signaling
Formation of the bivalent interaction between the Notch intracellular domain (NICD) and the transcription factor CSL is a key event in Notch signaling because it switches Notch-responsive genes from a repressed state to an activated state. Interaction of the intrinsically disordered RAM region of NI...
שמור ב:
| הוצא לאור ב: | J Mol Biol |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5576018/ https://ncbi.nlm.nih.gov/pubmed/26344835 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jmb.2015.09.001 |
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