Effects of linker length and transient secondary structure elements in the intrinsically disordered Notch RAM region on Notch signaling

Formation of the bivalent interaction between the Notch intracellular domain (NICD) and the transcription factor CSL is a key event in Notch signaling because it switches Notch-responsive genes from a repressed state to an activated state. Interaction of the intrinsically disordered RAM region of NI...

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Detalhes bibliográficos
Publicado no:J Mol Biol
Main Authors: Sherry, Kathryn P, Johnson, Scott E, Hatem, Christine L, Majumdar, Ananya, Barrick, Doug
Formato: Artigo
Idioma:Inglês
Publicado em: 2015
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5576018/
https://ncbi.nlm.nih.gov/pubmed/26344835
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jmb.2015.09.001
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