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Effects of linker length and transient secondary structure elements in the intrinsically disordered Notch RAM region on Notch signaling

Formation of the bivalent interaction between the Notch intracellular domain (NICD) and the transcription factor CSL is a key event in Notch signaling because it switches Notch-responsive genes from a repressed state to an activated state. Interaction of the intrinsically disordered RAM region of NI...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:J Mol Biol
Main Authors: Sherry, Kathryn P, Johnson, Scott E, Hatem, Christine L, Majumdar, Ananya, Barrick, Doug
Format: Artigo
Jezik:Inglês
Izdano: 2015
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5576018/
https://ncbi.nlm.nih.gov/pubmed/26344835
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jmb.2015.09.001
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