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Evaluation of the concentration of point defects in GaN
Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN gr...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5570983/ https://ncbi.nlm.nih.gov/pubmed/28839151 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-08570-1 |
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