Luminescence Properties of Defects in GaN: Solved and Unsolved Problems
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has revolutionized optoelectronic applications, enabling blue/white light-emitting devices and high-power electronics. Point defects in GaN strongly influence its optical and electronic properties, producing both beneficial and detrimental e...
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2025-09-01
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| coleção: | Solids |
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| Acesso em linha: | https://www.mdpi.com/2673-6497/6/3/52 |
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