Evaluation of the concentration of point defects in GaN

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN gr...

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Publicado no:Sci Rep
Main Authors: Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5570983/
https://ncbi.nlm.nih.gov/pubmed/28839151
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-08570-1
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