Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Documenti analoghi

• Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
  di: Tsykaniuk, Bogdan I., et al.
  Pubblicazione: (2017)
• Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
  di: Kladko, Vasyl, et al.
  Pubblicazione: (2012)
• N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
  di: Zhaole Su, et al.
  Pubblicazione: (2022-04-01)
• Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
  di: Jinxing Wu, et al.
  Pubblicazione: (2020-11-01)
• Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
  di: Wu, Jinxing, et al.
  Pubblicazione: (2020)