טוען...
Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and charge tr...
שמור ב:
| הוצא לאור ב: | Sci Rep |
|---|---|
| Main Authors: | , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2017
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5557951/ https://ncbi.nlm.nih.gov/pubmed/28811475 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06613-1 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|