Lataa...
Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2015
|
| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4597196/ https://ncbi.nlm.nih.gov/pubmed/26446400 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14902 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|