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III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III–V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III–V compounds are too easily accepted, ign...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Hur, Ji-Hyun, Jeon, Sanghun
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4766467/
https://ncbi.nlm.nih.gov/pubmed/26911249
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22001
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