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Temperature dependence of band gap in MoSe(2) grown by molecular beam epitaxy
We report on a temperature-dependent band gap property of epitaxial MoSe(2) ultrathin films. We prepare uniform MoSe(2) films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-hi...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5557720/ https://ncbi.nlm.nih.gov/pubmed/28812234 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2266-7 |
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