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Stacking orders induced direct band gap in bilayer MoSe(2)-WSe(2) lateral heterostructures
The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report th...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4985822/ https://ncbi.nlm.nih.gov/pubmed/27528196 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep31122 |
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