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Temperature dependence of band gap in MoSe(2) grown by molecular beam epitaxy
We report on a temperature-dependent band gap property of epitaxial MoSe(2) ultrathin films. We prepare uniform MoSe(2) films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-hi...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5557720/ https://ncbi.nlm.nih.gov/pubmed/28812234 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2266-7 |
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