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Possible electric field induced indirect to direct band gap transition in MoSe(2)
Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX(2) (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically...
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| Veröffentlicht in: | Sci Rep |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5507882/ https://ncbi.nlm.nih.gov/pubmed/28701785 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05613-5 |
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