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Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
This paper reviews the formation of nanoscale V-shaped pits on GaN-based light emitting diodes (LEDs) grown by the metal organic chemical vapor deposition (MOCVD) system and studies the effect of V-shaped pits on quantum efficiency. Since V-pits could provide potential barriers around threading disl...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5459134/ https://ncbi.nlm.nih.gov/pubmed/28772476 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10020113 |
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