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Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n(+)-...
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| Publicado en: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2015
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5455635/ https://ncbi.nlm.nih.gov/pubmed/28793455 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8074544 |
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