Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Materials (Basel)
Main Authors: Souaf, Manel, Baira, Mourad, Nasr, Olfa, Hadj Alouane, Mohamed Helmi, Maaref, Hassen, Sfaxi, Larbi, Ilahi, Bouraoui
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2015
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5455476/
https://ncbi.nlm.nih.gov/pubmed/28793465
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8084699
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