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A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, bu...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autor principal: | |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5453275/ https://ncbi.nlm.nih.gov/pubmed/28788561 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7032155 |
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