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Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al(2)O(3)-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the...
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| Главные авторы: | , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer
2011
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211152/ https://ncbi.nlm.nih.gov/pubmed/21711617 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-108 |
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