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Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO(2) and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP(x)O(y) layer is easily formed at the HfO(2)/InP interf...
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| Publicado en: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer US
2017
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5422219/ https://ncbi.nlm.nih.gov/pubmed/28486796 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2104-y |
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