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Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with those in...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5407402/ https://ncbi.nlm.nih.gov/pubmed/28454483 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2087-8 |
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