AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Lignende værker

• Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors
  af: Zhao, Sheng-Xun, et al.
  Udgivet: (2016)
• Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors
  af: Lv, Y. J., et al.
  Udgivet: (2016)
• Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
  af: Zhang, Jin, et al.
  Udgivet: (2014)
• Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
  af: Sang, Ling, et al.
  Udgivet: (2014)
• Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
  af: Kim, Hogyoung, et al.
  Udgivet: (2018)