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Low on-resistance diamond field effect transistor with high-k ZrO(2) as dielectric
Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO(2) layer on the diamond for the MISFETs. The k value...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5377369/ https://ncbi.nlm.nih.gov/pubmed/25242175 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06395 |
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