Učitavanje...
Design and fabrication of high-performance diamond triple-gate field-effect transistors
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output cur...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5052526/ https://ncbi.nlm.nih.gov/pubmed/27708372 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34757 |
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