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Design and fabrication of high-performance diamond triple-gate field-effect transistors

The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output cur...

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Bibliografski detalji
Izdano u:Sci Rep
Glavni autori: Liu, Jiangwei, Ohsato, Hirotaka, Wang, Xi, Liao, Meiyong, Koide, Yasuo
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5052526/
https://ncbi.nlm.nih.gov/pubmed/27708372
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34757
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