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Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing tempera...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5371540/ https://ncbi.nlm.nih.gov/pubmed/28359142 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2018-8 |
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