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The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al(2)O(3) as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The tr...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5256629/ https://ncbi.nlm.nih.gov/pubmed/28116611 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1852-z |
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