Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from d...

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Détails bibliographiques
Publié dans:Beilstein J Nanotechnol
Auteurs principaux: Schreyvogel, Christoph, Polyakov, Vladimir, Burk, Sina, Fedder, Helmut, Denisenko, Andrej, Fávaro de Oliveira, Felipe, Wunderlich, Ralf, Meijer, Jan, Zuerbig, Verena, Wrachtrup, Jörg, Nebel, Christoph E
Format: Artigo
Langue:Inglês
Publié: Beilstein-Institut 2016
Sujets:
Letter
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5238644/
https://ncbi.nlm.nih.gov/pubmed/28144522
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.7.165
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