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Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions
In this paper, we demonstrate an active control of the charge state of a single nitrogen-vacancy (NV) centre by using in-plane Schottky-diode geometries with aluminium on hydrogen-terminated diamond surface. A switching between NV(+), NV(0) and NV(−) can be performed with the Al-gates which apply el...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4503995/ https://ncbi.nlm.nih.gov/pubmed/26177799 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12160 |
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