Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

[Image: see text] In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor–liquid–solid grown Ge nanowire and Al contact pads due to the...

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Publicat a:Nano Lett
Autors principals: Kral, S., Zeiner, C., Stöger-Pollach, M., Bertagnolli, E., den Hertog, M. I., Lopez-Haro, M., Robin, E., El Hajraoui, K., Lugstein, A.
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2015
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4498448/
https://ncbi.nlm.nih.gov/pubmed/26052733
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.5b01748
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